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LWIR/SWIR switchable two color device based on InP/InGaAs integrated HBT/QWIP |
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| Authors: | N Cohen R Gardi G Sarusi A Sa&#x;ar M Byloos A Bezinger AJ SpringThorpe HC Liu |
| Institution: | aRacah Institute of Physics and the Center for Nanoscience and Nanotechnology, The Hebrew University of Jerusalem, Jerusalem 91904, Israel bELOP Electrooptic Industries Ltd., Rehovot 76111, Israel cInstitute for Microstructural Sciences, National Research Council, Ottawa, Canada K1A 0R6 |
| Abstract: | A novel two color infrared (IR) device that allows fast electrical switching between the short wavelength IR (SWIR) band (0.9–1.6 μm) and the long wavelength IR (LWIR) band (8–12 μm) is presented. The integrated sensor is based on MOCVD grown, lattice matched (to InP substrate) epilayers of InGaAs/InP and consists of two, monolithically integrated sections of heterojunction bipolar transistor (HBT) and quantum well infrared photodetector (QWIP). |
| Keywords: | QWIP See-spot HBT Two color SWIR InP |
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