Swift heavy ion beam mixing at V/Si interface |
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Institution: | 1. Center for Non-Conventional Energy Resources, University of Rajasthan, Jaipur 302004, India;2. National Centre for Compositional Characterization of Materials, ECIL Post, Hyderabad 500062, India;3. Department of Physics, University of Rajasthan, Jaipur 302004, India |
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Abstract: | Vanadium silicides are of increasing interest because of applications in high temperature superconductivity and in microelectronics as contact materials due to their good electrical conductivity. In the present work ion beam induced mixing at Si/V/Si interface has been investigated using 120 MeV Au ions at 1 × 1013 to 1 × 1014 ions/cm2 fluence at room temperature. V/Si interface was characterized by Grazing Incidence X-Ray Diffraction (GIXRD), Atomic Force Microscopy (AFM), Rutherford Backscattering Spectrometry (RBS) and Cross-sectional Transmission Electron Microscopy (XTEM) techniques before and after irradiation. It was found that the atomic mixing width increases with ion fluence. GIXRD and RBS investigations confirm the formation of V6Si5 silicide phase at the interface at the highest ion irradiation dose. |
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Keywords: | Vanadium silicide Ion beam mixing X-TEM Swift heavy ion |
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