Application of crystalline silicon surface oxidation to silicon heterojunction solar cells |
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Institution: | 1. Japan Advanced Institute of Science and Technology, 1-1 Asahidai, Nomi, Ishikawa 923-1292, Japan;2. CREST, Japan Science and Technology Agency, 4-1-8 Honcho, Kawaguchi, Saitama 332-0012, Japan |
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Abstract: | We study the effect of ultra-thin oxide (SiOx) layers inserted at the interfaces of silicon heterojunction (SHJ) solar cells on their open-circuit voltage (VOC). The SiOx layers can be easily formed by dipping c-Si into oxidant such as hydrogen peroxide (H2O2) and nitric acid (HNO3). We confirm the prevention of the undesirable epitaxial growth of Si layers during the deposition of a-Si films by the insertion of the ultra-thin SiOx layers. The formation of the SiOx layers by H2O2 leads to better effective minority carrier lifetime (τeff) and VOC than the case of using HNO3. c-Si with the ultra-thin SiOx layers formed by H2O2 dipping, prior to deposition of a-Si passivation layers, can have high implied VOC of up to ∼0.714 V. |
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Keywords: | Heterojunction solar cell Cat-CVD Passivation Epitaxial growth |
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