| 氧化铟掺杂对ZnFe2O4半导体气敏性能的影响 |
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| 引用本文： | 储向峰 刘杏芹. 氧化铟掺杂对ZnFe2O4半导体气敏性能的影响[J]. 应用化学, 1998, 15(6): 41-44 |
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| 作者姓名： | 储向峰 刘杏芹 |
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| 作者单位： | 中国科学技术大学材料科学与工程系 |
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| 摘 要： | 用化学共沉淀法在ＺｎＦｅ２Ｏ４中掺入Ｉｎ２Ｏ３．Ｘ射线衍射分析证实，Ｉｎ２Ｏ３与ＺｎＦｅ２Ｏ３之间没有新相生成，晶格常数有微小变化．掺入Ｉｎ２Ｏ３降低了ＺｎＦｅ２Ｏ４的电导，改变了该系列材料的导电机制，提高了材料对乙醇的敏感性和选择性，而且缩短了材料的响应时间
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| 关 键 词： | ZnFe_2O_4，In_2O_3，掺杂，酒敏传感器 |
| 收稿时间： | 1998-04-29 |
Effect of In2O3 Doping on the Gas Sensitivity of ZnFe2O4 |
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| Chu Xiangfeng,Liu Xingqin,Meng Guangyao. Effect of In2O3 Doping on the Gas Sensitivity of ZnFe2O4[J]. Chinese Journal of Applied Chemistry, 1998, 15(6): 41-44 |
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| Authors: | Chu Xiangfeng Liu Xingqin Meng Guangyao |
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| Affiliation: | Chu Xiangfeng,Liu Xingqin*,Meng Guangyao |
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| Abstract: | In2O3 has been doped in ZnFe2O4 by a chemical coprecipitation method. XRD results showed that in doped system there is no new phase formed and only a little change in lattice constants. Doping of In2O3 decreased the conductivity of ZnFe2O4 sensor, changed its conduction mechanism and increased its response to C2H5OH. |
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| Keywords: | ZnFe2O4 In2O3 doping ethanol sensor |
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