Influence of optical confinement and excitonic absorption on strong coupling in a bulk GaN microcavity grown on silicon

We report the optical study of a lambda-thick GaN microcavity grown by molecular beam epitaxy on a silicon substrate. Angle-resolved reflectivity measurements evidence the strong coupling regime at room temperature on the half cavity (without the top mirror), but at low temperature, the high excitonic absorption quenches the optical cavity mode at the excitonic energies. On the whole microcavity, the improved quality factor leads to the observation of the polariton emission whatever the temperature. No bottleneck is observed at 70 K even at low pumping power and large negative detuning. The impact of the optical confinement and the excitonic absorption, studied through reflectivity measurements are accurately reproduced by the transfer-matrix formalism. The optimization of the design in this structure leads to a large Rabi splitting (52 meV) at room temperature.