Pattern transfer and photoluminescence damage assessment of deep-submicrometer features etched by photon-induced cryoetching

We present a study of pattern-transfer and etch-induced damage in photon-induced cryoetching. Features with effective radii as small as 100 nm have been formed in both bulk and layered GaAs/AlGaAs materials. A measurement of the photoluminescence of etch-defined deep- submicrometer structures material suggests that this form of etching results in minimal process-induced damage. Modeling of the luminescence vs feature size for these features shows that the luminescence is limited only by carrier diffusion and non-radiative surface recombination.