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Complete identification of the Ti-related levels in GaP |
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| Authors: | P Roura J R Morante G Bremond T Benyattou G Guillot and W Ulrici |
| Institution: | a Department de Física Aplicada i Electrónica, Universitat de Barcelona, Av. Diagonal 645, E-08028, Barcelona, Spain b Laboratoire de Physique de la Matiére (associé au CNRS), Bâtiment 502, Institut National des Sciences Appliquées de Lyon, 20 Avenue A. Einstein, 69621, Villeurbanne Cedex, France c Zentralinstitut für Elektronenphysik der Akademie der Wissenschaften, Hausvogteiplatz 5–7, Berlin, Germany |
| Abstract: | A complete understanding of the electrical and optical properties of all the Ti-related levels is deduced from a number of different characterization techniques performed on several types of Ti-doped GaP materials (n-type, p-type and semi-insulating) grown by LEC. The Ti3+ /Ti4+ donor level and the Ti2+ /Ti3+ acceptor level are found at Ev + 0.92 and about Ec - 0.56 eV, respectively. Likewise, a comprehensive scheme of the two internal transitions 3T2→3A2 of the Ti2+ charge state and 2T2→2E of the Ti3+ charge state is given. |
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