Transparent conductive tungsten-doped tin oxide thin films synthesized by sol–gel technique on quartz glass substrates

Transparent conductive tungsten-doped tin oxide (SnO₂:W) thin films were synthesized on quartz glass substrates by sol–gel dip-coating method. It was found that the films were highly transparent and the average optical transmission was about 90% in the visible and near infrared region from 400 to 2,500 nm. The optical band gap is about 4.1 eV. The lowest resistivity of 5.8 × 10^?3 ohm cm was obtained, with the carrier mobility of 14.2 cm² V^?1 s^?1 and carrier concentration of 7.6 × 10¹⁹ cm^?3 in 3 at.% W-doping films annealed at 850 °C in air. The structural properties, surface morphology and chemical states for the films were investigated.