One-dimensional ZnO nanostructure-based optoelectronics |
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Institution: | 1. State Key Laboratory for Advanced Metals and Materials, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China;
2. Department of Mechanical Engineering, School of Engineering, Tokyo Institute of Technology NE-3, 2-12-1 Ookayama, Meguro-ku, Tokyo, 152-8552, Japan;
3. Beijing Key Laboratory for Advanced Energy Materials and Technologies, University of Science and Technology Beijing, Beijing 100083, China |
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Abstract: | Semiconductor nanowires, with their unique capability to bridge the nanoscopic and macroscopic worlds, have been demonstrated to have potential applications in energy conversion, electronics, optoelectronics, and biosensing devices. One-dimensional (1D) ZnO nanostructures, with coupled semiconducting and piezoelectric properties, have been extensively investigated and widely used to fabricate nanoscale optoelectronic devices. In this article, we review recent developments in 1D ZnO nanostructure based photodetectors and device performance enhancement by strain engineering piezoelectric polarization and interface modulation. The emphasis is on a fundamental understanding of electrical and optical phenomena, interfacial and contact behaviors, and device characteristics. Finally, the prospects of 1D ZnO nanostructure devices and new challenges are proposed. |
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Keywords: | one-dimensional ZnO optoelectronics self-powered photodetector strain engineering Van der Waals heterostructure |
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