Defect configurations in Ge-S chalcogenide glasses studied by Raman scattering and positron annihilation technique

Defect configurations of Ge-S binary glasses have been studied systemically by Raman scattering technique and positron annihilation lifetime spectra (PALS). The correlations between the positron lifetime data, structural features, and chemical compositions of Ge-S binary glasses have been established, and also the identification of open volume originated from coordination defects has been carried out. The cognizance of defect configuration will be very helpful to further understand the unique photosensitivity of chalcogenide glasses.