Effects of rapid thermal annealing on the optical properties of InAs/(In)GaAs quantum dots with different areal density |
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| Authors: | Zhan-Guo Li Ming-hui You Guo-Jun Liu Xin Gao Lin Li Yong Wang Lian-He Li |
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| Affiliation: | 1. State Key Laboratory of High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun 130022, China;2. Information Technology College, Jilin Agriculture University, Changchun 130022, China |
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| Abstract: | The effects of rapid thermal annealing on the optical properties of InAs/(In)GaAs quantum dots (QDs) with different areal density were investigated by photoluminescence (PL) measurement. The annealing results in PL peak energy blue-shift which strongly depends on QD areal density and capping layer. It is noticeable that low-density QDs and/or InGaAs-capped QDs are more sensitive to the annealing. We attribute the larger energy blue-shift from these samples to enhanced strain-driven diffusion and/or defect-assisted diffusion. |
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| Keywords: | Rapid thermal annealing Quantum dots Areal density |
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