辉光放电质谱法在高纯材料分析中的应用

高纯材料是现代高新技术发展的基础,在电子、光学和光电子等尖端科学领域发挥着重要作用。采用固体样品直接分析的辉光放电质谱法(GDMS),在高纯金属、高纯半导体材料的痕量和超痕量杂质分析中有着非常广泛的应用。综述了GDMS法对高纯金属、高纯半导体材料进行的元素分析,并对分析过程中工作参数、溅射时间、干扰峰等因素的影响进行了阐述。同时,也详述了应用GDMS法对高纯金属钛、镉,高纯半导体硅,分别进行的痕量杂质元素分析,结果显示放电稳定性良好,典型元素含量的相对标准偏差均在较为理想范围内。GDMS应用前景广泛,未来,GDMS将在除固体样品之外的其他样品类型的分析领域中发挥重要作用。

Application of GDMS for High Purity Materials

High purity material is the basis of modern high technology development, and plays an important role in the fields of electronics, optics and optoelectronics. Glow discharge mass spectrometry (GDMS) as a solid sample direct analysis technique is an important method for high purity material analysis, and it has been widely used to trace and ultra-trace analysis impurities in high purity metal and high purity semiconductor materials. This paper reviewed the element analysis of high purity metal and high purity semiconductor material by GDMS, and the influences of working parameters, sputtering time and interference peak. It summarized that the trace impurity elements analysis of high purity titanium, cadmium, high purity silicon by GDMS. Results showed good discharge stability and typical elements relative standard deviation in the ideal range.