| AlxGa1-xAs俄歇灵敏度因子的测定 |
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| 引用本文： | 陈维德,崔玉德.AlxGa1-xAs俄歇灵敏度因子的测定[J].物理学报,1994,43(4):673-677. |
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| 作者姓名： | 陈维德 崔玉德 |
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| 作者单位： | 中国科学院半导体研究所和表面物理国家重点实验室,北京100083 |
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| 摘 要： | 利用PHI610俄歇谱仪测定了Al,Ga和As的俄歇灵敏度因子。对6种不同x值的AlxGa1-xAs样品进行俄歇定量分析。结果与X射线双晶衍射测量值非常一致。结果表明,利用自身谱仪测定的俄歇灵敏度因子进行的定量分析结果,与目前通常使用的手册或内标法提供的元素相对灵敏度因子的定量分析结果相比,测量精度得到大大提高。
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| 关 键 词： | 砷铝镓 灵敏度 俄歇电子谱法 |
| 收稿时间： | 1993-07-12 |
DETERMINATION OF AlxGa1-xAs AUGER SENSITIVITY FACTORS |
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| CHEN WEI-DE and GUI YU-DE.DETERMINATION OF AlxGa1-xAs AUGER SENSITIVITY FACTORS[J].Acta Physica Sinica,1994,43(4):673-677. |
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| Authors: | CHEN WEI-DE and GUI YU-DE |
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| Abstract: | AlxGa1-xAs Auger sensitivity factors have been determined by using PHI 610 scanning Auger microprobe with pure elemental standards Al, Ag and matrix GaAs. The quantitative results of AlxGa1-xAs measured by the present method are in very good agreement with that by X-ray double crystal measurement. It is shown that by using sensitivity factors obtained from the self-instrument, the accuracy of the quantitative AES analysis can be considerably improved compared with that using elemental relative sensitivity factors given by the PHI handbook or internal standard method. |
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