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Morphology and Structure of Thermally Induced Microdefects in High-Temperature Treated Czochralski-Silicon
Authors:M. Reiche  W. Nitzsche
Abstract:The morphology and structure of amorphous precipitates grown by thermal annealing in the temperature range from 1100 °C to 1200 °C are investigated by means of highvoltage electron microscopy. It is shown that there exist some characteristic morphological types which are equivalent to the equilibrium forms of the cubic diamond structure itself or which can be derived from these. For the growth process an oxygen diffusion-controlled mechanism is deduced. Structural aspects are discussed on the basis of this mechanism.
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