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SixGe1−xGaAs Heterojunction IMPATT-Diodes |
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| Authors: | E. J. Brailovskii,L. A. Matveeva,G. D. Meľ nikov,J. F. Mikhailov,S. N. Semenova,J. A. Tkhorik,L. S. Khazan,V. Laichter,J. Č ervená k |
| Abstract: | Experimental research IMPATT-diodes on heterostructures SixGe1−x-GaAs showed that the interphase boundary is noted with high thermal and radiation resistance. It is shown that such diodes are an equivalent alternative IMPATT-diodes with type of Schottky barrier. |
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