Highly luminescent InP/GaP/ZnS nanocrystals and their application to white light-emitting diodes |
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| Authors: | Kim Sungwoo Kim Taehoon Kang Meejae Kwak Seong Kwon Yoo Tae Wook Park Lee Soon Yang Ilseung Hwang Sunjin Lee Jung Eun Kim Seong Keun Kim Sang-Wook |
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| Affiliation: | Department of Molecular Science and Technology, Ajou University, Suwon 443-749, Korea. |
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| Abstract: | Highly stable and luminescent InP/GaP/ZnS QDs with a maximum quantum yield of 85% were synthesized by in situ method. The GaP shell rendered passivation of the surface and removed the traps. TCSPC data showed an evidence for the GaP shell. InP/GaP/ZnS QDs show better stability than InP/ZnS. We studied the optical properties of white QD-LEDs corresponding to various QD concentrations. Among various concentrations, the white QD-LEDs with 0.5 mL of QDs exhibited a luminous efficiency of 54.71 lm/W, Ra of 80.56, and CCT of 7864 K. |
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