Catastrophic degradation of pulsed lasers based on AlGaAs/InGaAs/GaAs heterostructures with electron-beam pumping |
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| Authors: | M. M. Zverev V. O. Val’dner N. A. Gamov E. V. Zhdanova M. A. Ladugin A. A. Marmalyuk D. V. Peregudov V. B. Studenov |
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| Affiliation: | 1146. Moscow State Institute of Radioengineering, Electronics, and Automation, Moscow, 119454, Russia
2146. Stel’makh Polyus Research and Development Institute, Moscow, 117342, Russia
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| Abstract: | Catastrophic degradation of pulsed lasers based on InGaAs/AlGaAs/GaAs structures with different design of the active domain with transverse pumping by the electron beam at T = 300 K is studied. In lasers based on structures with a InGaAs single quantum well and with seven quantum wells, the maximal values of pulsed power are 70–90 and 10–20 W, respectively. |
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