Prerequisites for high-quality magnetic tunnel junctions: XPS and NMR study of Co/Al bilayers |
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| Authors: | HAM de Gronckel H Kohlstedt C Daniels |
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| Institution: | (1) Institute for Solid State Research (IFF), Research Center Jülich, 52425 Jülich, Germany, DE;(2) Institute for Thin Film and Ion Technology (ISI), Research Center Jülich, 52425 Jülich, Germany, DE |
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| Abstract: | Aluminum films with thicknesses ranging from 1 nm to 12 nm have been sputtered on 20 nm thick Co layers. The properties of
the Co/Al bilayers were studied by X-ray photoemission spectroscopy (XPS) and spin-echo nuclear magnetic resonance (NMR).
Both methods show independently that a 1 nm Al film covers the Co surface completely. XPS and NMR also showed that layers
thicker than 1 nm Al are not oxidized completely in ambient air. Similarities to and deviations from niobium with Al overlayers
(Nb/Al) are described. Prerequisites for the fabrication of tunneling magnetoresistance devices based on Co or NiFe ferromagnets
and an aluminum oxide barrier are discussed.
Received: 7 July 1999 / Accepted: 11 November 1999 / Published online: 8 March 2000 |
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| Keywords: | PACS: 82 80 Ch 82 80 Pv 68 55 -a |
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