| 退火工艺对含Ti-Al阻挡层的硅基Pb(Zr_(0.4),Ti_(0.6))O_3铁电电容器结构和性能影响的研究 |
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| 引用本文： | 郭颖楠,刘保亭,赵敬伟,王宽冒,王玉强,孙杰,陈剑辉.退火工艺对含Ti-Al阻挡层的硅基Pb(Zr_(0.4),Ti_(0.6))O_3铁电电容器结构和性能影响的研究[J].人工晶体学报,2010,39(1):62-66. |
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| 作者姓名： | 郭颖楠 刘保亭 赵敬伟 王宽冒 王玉强 孙杰 陈剑辉 |
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| 作者单位： | 河北大学物理科学与技术学院,保定,071002;河北大学电子信息工程学院,保定,071002 |
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| 基金项目： | 国家自然科学基金(No.60876055);;河北省自然科学基金(E2008000620,E2009000207);;教育部科学技术研究重点项目(No.207013);;河北省应用基础研究计划重点基础研究项目(08965124D) |
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| 摘 要： | 应用非晶的Ti-Al薄膜为导电阻挡层,采用射频磁控溅射法和溶胶-凝胶法在Si衬底上制备了La_(0.5)Sr_(0.5)CoO_3/Pb(Zr_(0.4),Ti_(0.6))O_3/La_(0.5)Sr_(0.5)CoO_3/Ti-Al/Si (LSCO/PZT/LSCO/Ti-Al/Si)异质结,研究了550 ℃常规退火(CTA)和快速退火(RTA)工艺对LSCO/PZT/LSCO/Ti-Al/Si结构和性能的影响.实验发现非晶Ti-Al薄膜在经过不同退火工艺后仍具有非晶结构,快速退火6 min的样品具有较好的物理性能.在418 kV/cm的外加电场下,LSCO/PZT/LSCO电容器的剩余极化强度和矫顽电场强度分别为22 μC/cm~2和83 kV/cm.LSCO/PZT/LSCO电容器的漏电行为不依赖于退火工艺,当电场强度低于46.7 kV/cm时为欧姆导电,高于46.7 kV/cm时为肖特基导电机制.
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| 关 键 词： | 退火工艺 PZT 磁控溅射法 溶胶-凝胶法 |
Effect of Annealing Conditions on the Structural and Physical Properties of Si-based Pb(Zr_(0.4),Ti_(0.6))O_3 Ferroelectric Capacitors with Ti-Al Film As a Barrier Layer |
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| GUO Ying-nan,LIU Bao-ting,ZHAO Jing-wei,WANG Kuan-mao,WANG Yu-qiang,SUN Jie,CHEN Jian-hui.Effect of Annealing Conditions on the Structural and Physical Properties of Si-based Pb(Zr_(0.4),Ti_(0.6))O_3 Ferroelectric Capacitors with Ti-Al Film As a Barrier Layer[J].Journal of Synthetic Crystals,2010,39(1):62-66. |
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| Authors: | GUO Ying-nan LIU Bao-ting ZHAO Jing-wei WANG Kuan-mao WANG Yu-qiang SUN Jie CHEN Jian-hui |
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| Institution: | 1.College of Physics Science and Technology;Hebei University;Baoding 071002;China;2.College of Electronic and Information Engineering;China |
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| Abstract: | |
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| Keywords: | annealing conditions PZT magnetron sputtering sol-gel method |
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