Analysis of the polarization dependence of the N K edge X-ray absorption fine structure in InN

The polarization dependence of the x-ray absorption near-edge structure (XANES) of InN beyond the N K edge is calculated. The XANES calculations are performed for different values of the angle θ between the XY plane of crystalline indium nitride and the incident x-radiation (θ = 15°, 30°, 45°, 60°, 75°, and 90°). It is shown that, in the case of N K XANES for InN, a strong polarization dependence of the specific features of the spectrum is observed. The calculated spectra are compared with previously measured experimental spectra. The partial densities of the electronic states of InN are calculated near the top of the valence band and near the bottom of the conduction band.