Long-wavelength GaInAsSb/AlGaAsSb DFB lasers emitting near 2.6 μm |
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Authors: | K Rßner M Hümmer A Benkert A Forchel |
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Institution: | Universität Würzburg, Technische Physik, Am Hubland 2, D-97074 Würzburg, Germany |
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Abstract: | We have successfully fabricated and characterized room temperature continuous wave (cw) GaInAsSb/AlGaAsSb distributed feedback lasers emitting in the wavelength region between 2.499 and 2.573 μm. To the best of our knowledge, this is the longest emission wavelength realized with a GaSb-based DFB laser diode. The laser structure used for DFB processing was grown by solid source molecular beam epitaxy. A DFB concept requiring no subsequent overgrowth step was used by defining first-order Cr-Bragg gratings laterally patterned to a ridge waveguide. Threshold currents smaller than 60 mA and room temperature cw output powers up to 6.5 mW were obtained. The laser diodes show single mode emission with side mode suppression ratios (SMSR) of up to 32 dB. |
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Keywords: | Molecular beam epitaxy GaInAsSb Mid-infrared diode lasers Distributed-feedback (DFB) lasers Gas sensing |
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