| Annealing Characteristics of ultra—thin high—K HfO2 gate dielectrics |
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| 引用本文： | 韩德栋,康晋锋,林长海,韩汝琦.Annealing Characteristics of ultra—thin high—K HfO2 gate dielectrics[J].中国物理 B,2003,12(3):325-327. |
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| 作者姓名： | 韩德栋 康晋锋 林长海 韩汝琦 |
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| 作者单位： | Institute of Microelectronics, Peking University, Beijing 100871, China;Institute of Microelectronics, Peking University, Beijing 100871, China;Institute of Microelectronics, Peking University, Beijing 100871, China;Institute of Microelectronics, Peking University, Beijing 100871, China |
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| 基金项目： | Project supported by the State Key Development Program for Basic Research of China (Grant No G20000365). |
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| 摘 要： | Ultra-thin HfO2 gate-dielectric films were fabricated by ion-beam sputtering a sintered HfO2 target and subsequently annealed at different temperatures and atmospheres.We have studied the capacitance-voltage,current-voltage,and breakdon characteristics of the gate dielectrics.The results show that electrical characteristics of HfO2 gate dielectric are related to the annealing temperature.With increase annealing temperature,the largest value of capacitance decreases,the equivalent oxide thickness increases,the leakage current reduces,and the breakdown voltage decreases.
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| 关 键 词： | 微电子学 高－K值 HfO2门分电性能 |
| 收稿时间： | 2002-01-24 |
Annealing characteristics of ultra-thin high-K HfO2 gate dielectrics |
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| Han De-Dong,Kang Jin-Feng,Lin Chang-Hai and Han Ru-Qi.Annealing characteristics of ultra-thin high-K HfO2 gate dielectrics[J].Chinese Physics B,2003,12(3):325-327. |
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| Authors: | Han De-Dong Kang Jin-Feng Lin Chang-Hai and Han Ru-Qi |
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| Institution: | Institute of Microelectronics, Peking University, Beijing 100871, China |
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| Abstract: | Ultra-thin HfO_2 gate-dielectric films were fabricated by ion-beam sputtering a sintered HfO_2 target and subsequently annealed at different temperatures and atmospheres. We have studied the capacitance-voltage, current-voltage, and breakdown characteristics of the gate dielectrics. The results show that electrical characteristics of HfO_2 gate dielectric are related to the annealing temperature. With increase annealing temperature, the largest value of capacitance decreases, the equivalent oxide thickness increases, the leakage current reduces, and the breakdown voltage decreases. |
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| Keywords: | annealing characteristics high-K HfO_2 gate dielectrics |
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