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Topological bound states
Authors:A. A. Gorbatsevich and M. N. Zhuravlev
Affiliation:1.St. Petersburg Institute of Physics and Technology,Russian Academy of Sciences,St. Petersburg,Russia;2.Moscow State Institute of Electronic Engineering (Technical University),Zelenograd, Moscow,Russia
Abstract:In the tight binding approximation, it has been shown that a peculiar type of electronic states localized near the topology change point exists in branching molecules and quantum conductors. Bound states of this type exist both below and above the allowed band, i.e., for both electrons and holes; this property fundamentally differentiates these states from the bound states formed in the minimum of the potential energy. The damping decrement of the wavefunction is independent of the band parameters and is an invariant determined by the characteristic of topology. The tunnel interaction between the topological bound states significantly determines the change in the electronic spectrum of the molecular systems in configuration transitions.
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