Temperature and injection current dependent electroluminescence study of GaInP/AlGaInP quantum well laser diode grown using tertiarybutylarsine and tertiarybutylphosphine |
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| Authors: | C.Y. Liu S.F. Yoon J.H. Teng J.R. Dong S.J. Chua |
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| Affiliation: | (1) School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, 639798 Singapore, Singapore;(2) Opto- and Electronic Systems Cluster, Institute of Materials Research and Engineering, 3 Research Link, 117602 Singapore, Singapore |
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| Abstract: | GaInP/AlGaInP triple quantum well (TQW) lasers, grown by metalorganic chemical vapor deposition (MOCVD) using tertiarybutylarsine (TBAs) and tertiarybutylphosphine (TBP), were fabricated with a pulsed anodic oxidation (PAO) process. The devices worked at room temperature (RT) with the lowest threshold current density (Jth) of 1.5 kA/cm2 ever reported for GaInP/AlGaInP lasers grown using TBAs and TBP. Temperature dependent (35–250 K) electroluminescence (EL) study of the GaInP/AlGaInP laser diode showed almost the same luminescence quenching behavior at a high temperature region (120–250 K), independent of the injection current (100–150 mA). A model involving a nonradiative recombination mechanism was presented to interpret the EL quenching behavior over the experimental temperature range. The nonradiative recombination centers in the Al-containing barrier or cladding layer are believed to contribute to the loss of carriers via nonradiative recombination. PACS 78.60.Fi; 71.20.Nr; 78.67.De; 81.15.Gh; 42.55.Px |
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