Photoinduced metal-to-insulator transition in a manganite thin film |
| |
Authors: | Takubo N Onishi I Takubo K Mizokawa T Miyano K |
| |
Affiliation: | Research Center for Advanced Science and Technology (RCAST), University of Tokyo, Tokyo, Japan. |
| |
Abstract: | A persistent photoinduced metal-to-insulator transition has been confirmed in a manganite thin film, Pr_(0.55)(Ca_(0.75)Sr_(0.25))_(0.45)MnO3, near a multicritical point by monitoring with transport measurements and x-ray photoemission spectroscopy. Together with the previously reported reverse effect, the photoinduced insulator-to-metal transition, it is found that the relative stability of the metallic and insulating phases interchanges around 80 K in the middle of a very wide hysteresis loop, which is a manifestation of the large potential barrier due to the long-range elastic energy. It is shown that photons are much more effective in overcoming the barrier via the electronically excited intermediate states than via the heat mode. |
| |
Keywords: | |
本文献已被 PubMed 等数据库收录! |
|