On the amplification mechanism of the ion-channel laser |
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Authors: | Chen K.-R. Katsouleas T.C. Dawson J.M. |
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Affiliation: | Dept. of Phys., California Univ., Los Angeles, CA ; |
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Abstract: | The amplification mechanism of the ion-channel laser (ICL) in the low-gain regime is studied. In this concept, a relativistic electron beam is injected into a plasma whose density is comparable to or lower than the beam's density. The head of the electron beam pushes out the plasma electrons, leaving an ion channel. The ion-focusing force causes the electrons to oscillate (betatron oscillations) about the axis and plays a role similar to the magnetic field in a cyclotron autoresonance maser (CARM). Radiation can be produced with wave frequencies from microwaves to X-rays depending on the beam energy and plasma density: ω~2γ3/2ωpe, where γ is the Lorentz factor of the beam and ωpe is the plasma frequency. Transverse (relativistic) bunching and axial (conventional) bunching are the amplification mechanisms in ICLs; only the latter effect operates in free-electron lasers. The competition of these two bunching mechanisms depends on beam velocity ν0z; their dependences on ν0z cancel for the cyclotron autoresonance masers. A linear theory is developed to study the physical mechanisms, and a PIC (particle-in-cell) simulation code is used to verify the theory. The mechanism is examined as a possible explanation for experimentally observed millimeter radiation from relativistic electron beams interacting with plasmas |
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