微波等离子体化学气相沉积合成掺氮金刚石薄膜的缺陷和结构特征及其生长行为

Diamond film was deposited in CH₄ and H₂ gas mixture with a small amount of N₂ by microwave plasma assisted chemical vapor deposition (MPCVD). Scanning electron microscopy, Raman spectroscopy and transmission electron microscopy were applied to characterize the film. The results showed that the growth of grains are different the central region and the edge. In the central region, diamond grains nucleated with a density as high as 4.8×10⁸ cm^-2 and were preferential in 〈001〉 orientation. The inner grains formed an area without stacking faults,which was surrounded by a rim with a high density of stacking faults. A growth model was suggested to interpret the morphological feature and the behavior of preferential growth. At the edge, the grains were identified to be 6H polytypes of diamond and a new twin relationship of grains was found. Besides, the effect of the N dopant on the growth behavior of the diamond film deposited by MPCVD was discussed in connection with the growth rate of the film. 关键词： 金刚石 结构表征 透射电子显微镜 多型金刚石

Structure and growth behavior of low N-doped diamond film by microwave plasma assisted chemical vapor deposition