Temperature-dependent photoluminescence and Raman spectra from porous GeSi/Si heterostructures |
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| Authors: | Hongtao Shi Youdou Zheng Yongbin Wang Renkuan Yuan |
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| Affiliation: | (1) Department of Physics, Nanjing University, 210008 Nanjing, People's Rep. of China;(2) Department of Physics, Jiangsu Educational Institute, 210013 Nanjing, People's Rep. of China |
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| Abstract: | ![]()
Porous GeSi/Si heterostructures were fabricated by laterally anodization in HF-based solutions. Photoluminescence spectra have been investigated as a function of temperature (77–300 K), showing that porous GeSi has a quite different temperature dependence from that of porous silicon. Raman spectra indicated that the sample structure changed after anodization. Phonon participation and direct recombination of excitons are proposed to be responsible in the light emission processes of porous GeSi and Si, respectively. |
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| Keywords: | 78.55.Hx 78.65.Jd |
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