Proton-induced F-centers in LiF and MgF2 |
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Authors: | J Becher RL Kernell CS Reft |
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Institution: | Physics Department, Old Dominion University, Norfolk, VA 23508, U.S.A. |
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Abstract: | The growth of F-centers in LiF irradiated at room temperature with 40- and 85-MeV protons and with 90Sr electrons was found to be proportional to the square root of the absorbed energy over the range 0.5 to 2.3 Mrad which corresponds to an F-center density range of 1 × 1016 to 1.5 × 1017 per cm3. The production efficiency was 5 × 103eV per F-center at an absorbed energy of 2.3 Mrad. The density of F-centers produced in MgF2 by 40- and 85-MeV protons was measured over an absorbed energy range of 0.2 to 29 Mrad which corresponds to a maximum F-center density of 2 × 1016 per cm3. The production efficiency for MgF2 was 4 × 105eV per F-center at an absorbed energy of 16 Mrad. |
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