| 磷砷化镓黄色发光二极管 |
| |
| 引用本文： | 方志烈,倪林福,汪曼生.磷砷化镓黄色发光二极管[J].发光学报,1982,3(1):40-45. |
| |
| 作者姓名： | 方志烈 倪林福 汪曼生 |
| |
| 作者单位： | 1. 复旦大学;2. 上海半导体器件六厂;3. 江南无线电材料厂 |
| |
| 摘 要： | 采用掺氨砷压法在磷化镓衬底上外延生长掺碲n型的GaAs0.15P0.85:N/GaP材料,制成磷砷化镓黄色发光二极管,测量了其光学和电学性能.讨论了影响器件发光效率的因素.
|
YELLOW LIGHT-EMITTING DIODE OF GALLIUM ARSENIDE PHOSPHIDE |
| |
| Fang Zhi-lie,Ni Lin-fu,Wang Man-sheng.YELLOW LIGHT-EMITTING DIODE OF GALLIUM ARSENIDE PHOSPHIDE[J].Chinese Journal of Luminescence,1982,3(1):40-45. |
| |
| Authors: | Fang Zhi-lie Ni Lin-fu Wang Man-sheng |
| |
| Institution: | 1. Fudan university;2. Shanghai No.6 Semiconductor Devices Factory;3. Jiang Nan Radio Material Factory |
| |
| Abstract: | The Yellow light-emitting diode of gallium arsenide phosophide was prepared with the tellurium doping n-type GaAs0.15P0.35:N/Gap material which was grown on gallium phosphide substrate by vapor phase epitaxy using ammonium doping arsenic vapor pressure method. The optical and electrical performances of the LED were measured. The factors w affect luminescent efficiency of the device were discussed. |
| |
| Keywords: | |
| 本文献已被 CNKI 等数据库收录！ |
| 点击此处可从《发光学报》浏览原始摘要信息 |
| 点击此处可从《发光学报》下载免费的PDF全文 |
