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电子俘获材料SrS:Eu,Sm,Er的光谱特性和光存储特性
引用本文:王英,郝振东,张霞,张家骅.电子俘获材料SrS:Eu,Sm,Er的光谱特性和光存储特性[J].发光学报,2013,34(3):251-256.
作者姓名:王英  郝振东  张霞  张家骅
作者单位:1. 发光学及应用国家重点实验室 中国科学院长春光学精密机械与物理研究所, 吉林 长春 130033; 2. 中国科学院大学, 北京 100049
基金项目:国家自然科学基金(10834006,10774141,10904141,10904140);国家科技部项目(2006CB601104);吉林省科技发展计划(20090134,20090524);中国科学院创新项目资助
摘    要:提出一种Er3+改进的电子俘获光存储材料SrS∶Eu0.002,Sm0.002,Erx,其中,0≤x≤0.006。通过水热反应,研究了不同退火温度对荧光粉晶相形成的影响,以及不同含量的Er3+对荧光粉的发光性质以及光存储特性的影响。结果表明,Er3+的引入导致荧光增强及光存储特性提高。当Er3+的摩尔分数x=0.003时,荧光强度、光激励发光强度及光存储量出现最大值,分别为不含Er3+时的1.9倍、2倍和3.5倍。同时,Er3+的掺入不改变样品的晶体结构和衰减特性。

关 键 词:SrS  电子俘获  光存储  光激励
收稿时间:2012-12-14

Optical Storage and Spectrum Properties of Electron Trapping Materials SrS:Eu,Sm, Er
WANG Ying,HAO Zhen-dong,ZHANG Xia,ZHANG Jia-hua.Optical Storage and Spectrum Properties of Electron Trapping Materials SrS:Eu,Sm, Er[J].Chinese Journal of Luminescence,2013,34(3):251-256.
Authors:WANG Ying  HAO Zhen-dong  ZHANG Xia  ZHANG Jia-hua
Institution:1. Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China; 2. University of Chinese Academy of Sciences, Beijing 100049, China
Abstract:Er modified electron trapping optical storage materials SrS:Eu0.002, Sm0.002, Erx are prepared by hydrothermal method. The effect of temperature on crystal phase formation, Er content on optical storage and luminescence properties are studied. It is revealed that the Er induced luminescent enhancement and the optical storage properties improved. The maximum luminescence intensity, Photostimulated luminescence intensity and optical storage are obtained at x=0.003, which is as high as 1.9 times, 2 times and 3.5 times of the Er free phosphor, respectively. The introduction of Er didn't change the crystal structure and Photostimulated luminescence decay curve properties of the sample. The photostimulated luminescence decay curve can be will-fitted into a double exponential function.
Keywords:SrS  electron trapping  optical storage  photostimulated
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