Recombination in tensile-strained In0.3Ga0.7As quantum well on InP |
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| Authors: | S. Kalem H.-C. Kuo A. Curtis G. Stillman |
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| Affiliation: | (1) Department of Physics, Jiangsu Key Laboratory of Thin Films, Soochow University, Suzhou, 215006, China;(2) Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, China |
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| Abstract: | ![]()
Photoluminescence (PL) measurements under different excitation powers were carried out at low temperature on tensile-strained In0.3Ga0.7As single wells of 6 nm with InGaAs barriers lattice matched to InP substrate. PL measurements taken at 2 K show a main emission band at 0.762 eV probably originating from a type-II transition. The insertion of an ultrathin InAs layer at In0.3Ga0.7As on In0.53Ga0.47As interface reveals an additional feature at 0.711 eV as well as an excited-state luminescence emission at high pump powers. The InAs insertion improves heterointerface quality, which was confirmed by an increase in PL intensity. |
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