Efficient stimulated Raman scattering in silicon |
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| Authors: | H.-P. Grassl Max Maier |
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| Affiliation: | Fachbereich Physik der Universität Regensburg, Regensburg, Germany |
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| Abstract: | ![]()
Stimulated Raman scattering in silicon was investigated at liquid helium temperatures. A Q-switched single mode Nd: YAG laser was used to generate Stokes radiation at 1.127 μm. Time resolved measurements give a maximum power conversion efficiency of 20%. The effects of intensity induced losses are discussed. |
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