InGaAsP quantum-wells saturable absorber for diode-pumped passively Q-switched 1.3-μm lasers |
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| Authors: | A. Li S.C. Liu K.W. Su Y.L. Liao S.C. Huang Y.F. Chen K.F. Huang |
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| Affiliation: | (1) Department of Electrophysics, National Chiao Tung University, 1001 TA Hsueh Road, Hsinchu, 30050, Taiwan |
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| Abstract: | We demonstrate the first use of InGaAsP quantum wells as a saturable absorber in the Q-switching of a diode-pumped Nd-doped 1.3 μm laser. The barrier layers of the InGaAsP quantum-well device are designed to be a strong absorber for the suppression of the transition channel at 1.06 μm. With an incident pump power of 1.8 W, an average output power of 160 mW with a Q-switched pulse width of 19 ns at a pulse repetition rate of 38 kHz was obtained. PACS 42.60.Gd; 42.55.Xi; 42.65.Re |
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