Voltage-Gated Metal-Enhanced Fluorescence |
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Authors: | Yongxia Zhang Kadir Aslan Chris D. Geddes |
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Affiliation: | (1) The Institute of Fluorescence, University of Maryland Biotechnology Institute, 701 East Pratt St, Baltimore, MD 21202, USA;(2) Institute of Fluorescence, Laboratory for Advanced Fluorescence Spectroscopy, Medical Biotechnology Center, University of Maryland Biotechnology Institute, 725 West Lombard St, Baltimore, MD 21201, USA |
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Abstract: | We demonstrate the influence of electrical current on the ability of surface plasmons to amplify fluorescence signatures. An applied direct current across Silver Island Films (SIFs) of low electrical resistance perturbs the fluorescence enhancement. For a given applied current, surface plasmons in just-continuous films are sparsely available for fluorophore dipole-coupling and hence the enhanced fluorescence is gated as a function of the applied current. For thicker, low resistance films, sufficient charge carriers are now present in the metal that metal-enhanced fluorescence (MEF) is perturbed to a lesser extent, induced surface plasmons readily formed on the surface by the close-proximity dipole. |
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Keywords: | Metal-enhanced fluorescence Radiative decay engineering Plasmon controlled fluorescence Voltage gated metal-enhanced fluorescence |
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