Combinatorial thin film synthesis of Gd-doped Y3Al5O12 ultraviolet emitting materials

Multi-layer Y₃Al₅O₁₂:Gd thin films were deposited in a combinatorial fashion using radio-frequency magnetron sputtering. Initially, Y₃Al₅O₁₂ (yttrium aluminum garnet or YAG) films were deposited in a combinatorial fashion to optimize the Y and Al sputtering conditions. Subsequently, alternating layers of uniform Y₃Al₅O₁₂ and graded Gd were deposited and the film composition was homogenized by post-deposition 1000 °C 10-h thermal treatment. A composition range of 1–12 at% Gd was produced in two films. Ultraviolet emission with a peak wavelength at 312 nm was observed from the gadolinium ⁸S_7/2-⁶P_7/2 transition via cathodoluminescence (CL) excitation. The CL-induced intensity was found to be maximum at 5.5 at% Gd. PACS 81.15.Cd, 78.60.Hf, 02.10.Ox, 78.66.-w, 81.15.-z, 78.67.Pt