Synaptic behaviors and modeling of a metal oxide memristive device |
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Authors: | Ting?Chang Sung-Hyun?Jo Kuk-Hwan?Kim Patrick?Sheridan Siddharth?Gaba Email author" target="_blank">Wei?LuEmail author |
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Institution: | (1) Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI 48109, USA; |
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Abstract: | Nanoscale memristive devices using tungsten oxide as the switching layer have been fabricated and characterized. The devices
show the characteristics of a flux-controlled memristor such that the conductance change is governed by the history of the
applied voltage signals, leading to synaptic behaviors including long-term potentiation and depression. The memristive behavior
is attributed to the migration of oxygen vacancies upon bias which modulates the interplay between Schottky barrier emission
and tunneling at the WO
X
/electrode interface. A physical model incorporating ion drift and diffusion effects using an internal state variable representing
the area of the conductive region has been proposed to explain the observed memristive behaviors. A SPICE model has been further
developed that can be directly incorporated into existing circuit simulators. This type of device can be fabricated with low-temperature
processes and has potential applications in synaptic computations and as analog circuit components. |
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Keywords: | |
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