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The electronic structure of modulation-doped In0.53Ga0.47As/n-In0.52Al0.48As heterostructure |
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| Authors: | M. Ayman Magdy R. A. Al-Khader M. Tomak |
| Affiliation: | (1) Department of Physics, Middle East Technical University, 06531 Ankara, Turkey |
| Abstract: | Summary The subband structure of modulation-doped InGaAs/InAlAs heterostructures is calculated in a variational self-consistent manner. The dependence on various device parameters is examined. The many-body exchange correlation effects are taken into account. |
| Keywords: | Electron states in low-dimensional structures (including quantum wells superlattices layer structures and intercalation compounds) |
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