Thermally induced effects on structural and electrical properties of selenium-rich Cd-Se thin films |
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| Authors: | H Mahfoz Kotb MA Dabban FM Abdel-Rahim AY Abdel-latif MM Hafiz |
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| Institution: | 1. Physics Department, Faculty of Science, Assiut University, Assiut 71516, Egypt;2. Physics Department, Faculty of Science, AL-Azhar University, Assiut, Egypt;1. Physics Department, Faculty of Science, Al - Azhar University, P.O. 71452, Assiut, Egypt;2. Physics Department, Faculty of Science and Arts Khulais, University of Jeddah, Saudi Arabia;1. Department of Metallurgical and Foundry Engineering, Faculty of Materials Science and Engineering, University of Miskolc, B/1 Building, 3515 Miskolc, Hungary;2. Institute of Materials and Environmental Chemistry, Research Centre for Natural Sciences, Hungarian Academy of Sciences, Pusztaszeri út 59-67, 1025 Budapest, Hungary;3. Institute of Molecular Pharmacology, Research Centre for Natural Sciences, Hungarian Academy of Sciences, Pusztaszeri út 59-67, 1025 Budapest, Hungary;1. Materials Science Laboratory, Department of Physics, Faculty of Science, Al-Balqa Applied University, Al-Salt 19117, Jordan;2. Department of Physics, Faculty of Science, University of Jordan, Amman 11942, Jordan;1. Physics Program, Faculty of Science and Technology, Nakhon Pathom Rajabhat University, Nakhon Pathom, 73000, Thailand;2. Center of Excellence in Glass Technology and Materials Science (CEGM), Nakhon Pathom Rajabhat University, Nakhon Pathom, 73000, Thailand;3. Informatics Mathematics, Faculty of Science and Technology, Suan Sunandha Rajabhat University, Bangkok 10300, Thailand;1. Department of Materials Science and Engineering, University of Tabriz, Iran;2. Department of Materials Engineering, Malek-Ashtar University of Technology, Iran |
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| Abstract: | The effect of annealing in nitrogen atmosphere on structural and electrical properties of selenium rich CdSe (SR-CdSe) thin films deposited by thermal evaporation onto glass substrates were studied. X-ray diffraction (XRD) patterns showed that the as-prepared films were amorphous, whereas the annealed films were polycrystalline. Analyzing XRD patterns reveals the coexistence of both Se and CdSe crystalline phases which exhibits a hexagonal structure. The microstructure parameters (crystallite size, microstrain and dislocation density) were calculated for annealed films.Temperature dependence (300–500 K) of d.c. conductivity was studied for as-prepared and annealed thin films. The experimental results indicate that the electrical conduction taking place through thermally activated process. At higher temperatures, electrical conduction for as-prepared film is taking place in the extended states while localized states conduction in the band tails is most likely to take place for annealed films. Regarding the lower temperature range, conduction by hopping in the localized states near the Fermi level is found to be dominant. Thus, conductivity data in this range was analyzed using Mott's variable range hopping conduction, where Mott's parameters were calculated for SR-CdSe thin films. |
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