退火对非晶Ge/晶态Ag迭层膜性质的影响

本文利用X射线衍射,扫描电子显微镜和电阻温度关系的测量,研究了非晶Ge/晶态Ag迭层膜的退火行为。低温电阻的测量温区为80—300K,同时给出了室温电阻和退火温度的关系,实验发现一个新的互扩散现象:随着退火温度的升高,Ge不断晶化,同时,部分Ge由于扩散而溶于Ag中,退火温度再升高,扩散到Ag中的Ge又重新析出,利用电阻变化估算出Ge/Ag互扩散的激活能为0.15eV。本文还讨论了退火过程中各结构下的输运性质。 关键词：

THE EFFECT OF ANNEALING ON THE PROPERTIES OF AMORPHOUS GERMANIUM/CRYSTALLINE SILVER BILAYER

By using X-ray differaction, SEM and the measurement of sheet resistance, the effect of annealing of a-Ge/c-Ag bilayer were studied. Sheet resistance of the bilayers were measured in the range 80-300 K. The relation between sheet resistance at room temperature and annealing temperature was presented. A new diffusion mechanism was found. As the temperature increased, amorphous germanium crystallize. In the meantime, a part of Ge diffuse into Ag. When the temperature went on increasing, the germanium which diffused into silver would separate out again. The activation energy of diffusion was estimated to be 0.15 eV by means of measuring the sheet resistance of bilayer.