Transient gain property of a weak probe field in an asymmetric semiconductor coupled double quantum well structure |
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| Authors: | ZhiGang Wang ZhiRen Zheng JunHua Yu |
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| Affiliation: | 1. Institute of Atomic and Molecular Physics, Jilin University, Changchun 130012, China;2. Center for Condensed Matter Science and Technology, Physics Department, Harbin Institute of Technology, Harbin 150001, China;3. Tunable Laser Technology National Key Laboratory, Harbin Institute of Technology, Harbin 150001, China |
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| Abstract: | The transient gain property of a weak probe field in an asymmetric semiconductor coupled double quantum well structure is reported. The transient process of the system, which is induced by the external coherent coupling field, shows the property of no inverse gain. We find that the transient behavior of the probe field can be tuned by the change of tunneling barrier. Both the amplitude of the transient gain and the frequency of the oscillation can be affected by the lifetime broadening. |
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| Keywords: | 42.50.Gy 42.50.Hz |
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