Hydrogenic impurity in double quantum dots |
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Authors: | X.F. Wang |
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Affiliation: | State Key Laboratory for Superlattics and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, 100083 Beijing, China |
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Abstract: | The ground state binding energy and the average interparticle distances for a hydrogenic impurity in double quantum dots with Gaussian confinement potential are studied by the variational method. The probability density of the electron is calculated, too. The dependence of the binding energy on the impurity position is investigated for GaAs quantum dots. The result shows that the binding energy has a minimum as a function of the distance between the two quantum dots when the impurity is located at the center of one quantum dot or at the center of the edge of one quantum dot. When the impurity is located at the center of the two dots, the binding energy decreases monotonically. |
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Keywords: | Hydrogenic impurity Double quantum dots Binding energy Probability density |
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