Determination of the carrier concentration in doped <Emphasis Type="Italic">n</Emphasis>-GaAs layers by Raman and light reflection spectroscopies |
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| Authors: | L P Avakyants P Yu Bokov N A Volchkov I P Kazakov A V Chervyakov |
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| Institution: | (1) Moscow State University, Moscow, 119992, Russia;(2) Lebedev Institute of Physics, Russian Academy of Sciences, Moscow, 119991, Russia |
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| Abstract: | The carrier concentrations in Si-doped n-GaAs films have been determined by Raman and light reflection spectroscopies. The data obtained are in good agreement with the results of Hall measurements. It is shown that the light reflection and Raman spectroscopies supplement each other in determination of carrier concentrations in the range 1017?1019 cm?3. |
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