Influence of N cluster states on band dispersion in GaInNAs quantum wells |
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Authors: | SB Healy A Lindsay EP OReilly |
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Institution: | Tyndall National Institute, Lee Maltings, Cork, Ireland |
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Abstract: | We use a modified band-anticrossing (BAC) model to investigate the band dispersion in a GaNxAs1-x/AlGaAs quantum well (QW) as a function of hydrostatic pressure. The band edge mass increases considerably more quickly with pressure than in the case of a GaAs/AlGaAs QW, and the subband separation also decreases significantly. We predict that the strong anticrossing interaction between the GaAs host conduction band and isolated N levels will inhibit tunnelling through the QW for a range of energy above the isolated N levels. The energy of N resonant states depends strongly on details of the local environment, giving a broader calculated distribution of N states in GaInNAs compared to GaNAs. |
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Keywords: | GaInNAs Band-anticrossing model Resonant tunnelling Alloy disorder |
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