| Multiphoton Ionization of Monosilane |
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| 作者姓名： | 陆庆正 丁传凡 刁培谦 孔繁敖 松为宏幸 |
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| 作者单位： | Department of Modern Chemistry，University of Science and Technology of China，Hefei 230026，PRC，Department of Modern Chemistry，University of Science and Technology of China，Hefei 230026，PRC，Department of Modern Chemistry，University of Science and Technology of China，Hefei 230026，PRC，Department of Modern Chemistry，University of Science and Technology of China，Hefei 230026，PRC Institure of Chemistry，Academia Sinica，Beijing 100080，Department of Reaction Chemistry，Faculty of Engineering，University of Tokyo，Bunkyo-ku，Tokyo 113，Japan |
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| 基金项目： | Project supported by the funds of cooperation between University of Science and Technology of China and University of Tokyo. |
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| 摘 要： | The (3 + 1) photon ionization spectra of SiH_4 have been measured. A basically continuous spectrum was recorded in laser wavelengths from 428 to 458 nm.Two vibrational progressions were found in the UV laser region of 347-392 nm, anda fine structure of the band at 363.5 nm was assigned.The fragment ions were detected by a time-offlight mass spectrometer. No parent ion SiH_4~+ was observed whereas SiH_2~+ and SiH_3~+ were the major products. The ratio of SiH_2~+/SiH_3~+ was approximately equal to that of single photon ionization at the same energy, but the fraction of Si~+ was increased. Some additional bands appeared in Si~+ spectrum in the range of 384-390 nm implicating that the increased Si~+ might be generated from SiH_2~+ and SiH~+ ions.
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Multiphoton Ionization of Monosilane |
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| LU Qing-Zheng DING Chuan-Fan DIAO Pei-Qian KONG Fan-Ao.Multiphoton Ionization of Monosilane[J].Science in China(Chemistry),1993(2). |
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| Authors: | LU Qing-Zheng DING Chuan-Fan DIAO Pei-Qian KONG Fan-Ao |
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| Institution: | LU Qing-Zheng DING Chuan-Fan DIAO Pei-Qian KONG Fan-Ao~ |
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| Abstract: | The (3 + 1) photon ionization spectra of SiH_4 have been measured. A basically continuous spectrum was recorded in laser wavelengths from 428 to 458 nm.Two vibrational progressions were found in the UV laser region of 347-392 nm, anda fine structure of the band at 363.5 nm was assigned.The fragment ions were detected by a time-offlight mass spectrometer. No parent ion SiH_4~+ was observed whereas SiH_2~+ and SiH_3~+ were the major products. The ratio of SiH_2~+/SiH_3~+ was approximately equal to that of single photon ionization at the same energy, but the fraction of Si~+ was increased. Some additional bands appeared in Si~+ spectrum in the range of 384-390 nm implicating that the increased Si~+ might be generated from SiH_2~+ and SiH~+ ions. |
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| Keywords: | multiphoton processes laser photoionization mass detection monosilane |
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