Einfluß der Transportkinetik auf die Kristallisation von AIIBIVC-Verbindungen beim Gasphasentransport

The reported investigation intended to find tendencies in the influence of thermal and chemical conditions of chemical transport reactions on the growth of ZnSiP₂ and ZnSiAs₂ crystals. A more favourable crystallisation with less intergrowth is proved, if transport gases of the same system — as e.g. ZnCl₂ or SiCl₄ — is used instead of PbCl₂ and TeCl₄. — Depending on the concentration of the transporting medium the largest amount of crystals with lengths of more than 5 mm coincides with the point of lowest transport rate. The number of crystal defects increases with the dimensions of the crystals. — From the experimental results a hypothesis for explaining the locally different growth of crystals of ternary compounds is presented.