| Abstract: | ![]()
The dependence of the transverse far field intensity distribution of GaAs lightemitting diodes on the ac-frequency is studied. The used four-layer-step-discontinuity of the dielectric constant influenced by the free-carrier absorption is modified in that the region of light creation and the wave guide region are assumed to be separate. The so calculated inclination of the maximum far field intensity direction in comparison with the plane normal to the light emitting surface of the diode decreases with increasing modulating frequency. The frequency influence on the phase homogeneity of the radiated light is shortly mentioned. |
