| 外延p-Si中的高-低结对光电化学转换效率的影响 |
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| 引用本文： | 李澄,王士勋,李国铮,徐国宪.外延p-Si中的高-低结对光电化学转换效率的影响[J].应用化学,1986,0(3):56-60. |
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| 作者姓名： | 李澄 王士勋 李国铮 徐国宪 |
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| 作者单位： | 山东大学化学系 |
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| 摘 要： | 本文采用p+/p-Si作为光阴极进行了光电化学电池和光助析氢电池的研究,光转换效率分别达到了7.4%(V2+/3+电对)和7.8%(Co—W修饰),并讨论了导致高效率的原因,强调了高-低结对于改善半导体光电极性能的重要性。
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| 收稿时间： | 1985-01-05 |
| 修稿时间： | 1985-02-26 |
THE INFLUENCE OF HIGH-LOW JUNCTION IN EPITAXIAL p-Si ON PHOTOELECTRICAL CONVERSION EFFICIENCY |
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| Li Cheng,Wang Shixun,Li Guozheng,Xu Guoxian.THE INFLUENCE OF HIGH-LOW JUNCTION IN EPITAXIAL p-Si ON PHOTOELECTRICAL CONVERSION EFFICIENCY[J].Chinese Journal of Applied Chemistry,1986,0(3):56-60. |
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| Authors: | Li Cheng Wang Shixun Li Guozheng Xu Guoxian |
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| Institution: | Department of Chemistry, Shandong University |
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| Abstract: | An epitaxial p-Si(p+/p-Si)containing semiconductive high-low junction was used as photocathode in both photoelectrochemical voltaic and photoassisted hydrogen evolution cells. The conversion efficiencies were 7.4% (V2+/3+ redox couple) and 7.8% (Co-W alloy decorated) respectively. The role of high-low junction in improving conversion efficiency was disscussed. |
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