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Hexagonal AlN films grown on nominal and off-axis Si(0 0 1) substrates |
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| Authors: | V. Lebedev, J. Jinschek, J. Kr uß lich, U. Kaiser, B. Schr ter,W. Richter |
| Affiliation: | a Institut für Festkörperphysik, Universität Jena, Max-Wien-Platz 1, D-07743 Jena, Germany b Institut für Quantenelektronik, Universität Jena, Max-Wien-Platz 1, D-07743 Jena, Germany |
| Abstract: | Nucleation and growth of wurtzite AlN layers on nominal and off-axis Si(0 0 1) substrates by plasma-assisted molecular beam epitaxy is reported. The nucleation and the growth dynamics have been studied in situ by reflection high-energy electron diffraction. For the films grown on the nominal Si(0 0 1) surface, cross-sectional transmission electron microscopy and X-ray diffraction investigations revealed a two-domain film structure (AlN1 and AlN2) with an epitaxial orientation relationship of [0 0 0 1]AlN || [0 0 1]Si and AlN1 || AlN2 || [1 1 0]Si. The epitaxial growth of single crystalline wurtzite AlN thin films has been achieved on off-axis Si(0 0 1) substrates with an epitaxial orientation relationship of [0 0 0 1]AlN parallel to the surface normal and 0 1 1 0AlN || [1 1 0]Si. |
| Keywords: | A1. Interfaces A1. Nucleation A3. Molecular beam epitaxy B1. Nitrides |
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