Selected 3d-Transition Metals in Gallium Antimonide: Vanadium,Titanium and Iron

3d-transition metals are known to produce deep levels in III-V semiconductors like gallium arsenide or indium phosphide. In this work, gallium antimonide was doped with the most promising candidates vanadium, titanium and iron according to the predictions of the energetic positions of the 3+/2+-charge transfer levels in the bandgap. For optimum incorporation of dopants several growth methods (travelling heater method THM, Czochralski CZ and liquid phase electroepitaxy LPEE) were used. The grown crystals were characterized by photoluminescence and electrical measurements. No deep levels in the forbidden band were found in the case of vanadium and titanium. Vanadium shows a scavenging effect on unintentional impurities. Titanium tends to form inclusions. In gallium antimonide doped with iron an acceptor was found with an activation energy of 26 meV. The findings support the predictions of Tersoff concerning charge transfer levels.